Early memristive device pioneer and BEOL CMOS memristor device fabrication expert.

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Kris Campbell is both a scientist and an engineer, with a passion for creating and building new device technologies. She loves everything about chemistry and believes that a solid foundation in chemistry is one of the best things a student in any science or engineering discipline can give to themselves. With it comes an appreciation for all things in nature and in the science surrounding technology. As both a chemist and an electrical engineer, she has had a range of professional experiences from electro-optic circuit design, and nonvolatile memory device technology development and fabrication, to teaching. She is currently an Associate Professor in the electrical and computer engineering department at Boise State University.

Kris Campbell has over 10 years of electrical engineering industry experience in the areas of microfabrication and optoelectronic circuit design. Kris has published over 20 papers in peer reviewed journals, 2 book chapters, and several conference proceedings. Her current research interests are in the areas of reconfigurable electronics based on ion-conducting chalcogenide glasses, and new electronic memory technologies based on ion-conduction and electron spin zero-field splitting.

Knowm Collaboration

Dr. Kris Campbell Presenting Memristor Properties at 2015 IEEE 58th International Midwest Symposium on Circuits and Systems

Dr. Kris Campbell Presenting Self-directed Channel Memristor Properties at 2016 the 5th Memristor Symposium in August 2016 in Dresden


University of California, Davis
Physical Chemistry Ph.D.

University of Nevada, Las Vegas
Electrical Engineering B.S.E.E.

Select Publications

  • Edwards, A.H., Campbell, K., Pineda, A. “Self-trapping of single and paired electrons in Ge2Se3.” Journal of Physics: Condensed Matter. 24(19), pp. 195801/1-195801/9 (2012).
  • Devasia, A., MacMahon, D., Raoux, S., Campbell, K., & Kurinec, S. “Investigation of inter-diffusion in bilayer GeTe/SnSe phase change memory films.” Thin Solid Films, 520(11) 3931-3935 (2012).
  • Edwards, A., Taylor, P.C., Campbell, K., Pineda, A. “First-principles study of 75As NQR in arsenic chalcogenide compounds.” Journal of Physics: Condensed Matter. 23(5). pp. 055502/1-055502/11 (2011).
  • Devasia, A.; Kurinec, S.; Campbell, K.A.; Raoux, S. “Influence of Sn Migration on phase transition in GeTe and Ge2Se3 thin films.” Applied Phys. Lett., 96, 141908/1-141908/3 (2010).
  • Devasia, A.; Bai, F.; Davis, M.; Campbell, K. A.; Gupta, S.; Kurinec, S. “Analyzing residual stress in bilayer chalcogenide Ge2Se3/SnTe films.” Thin Solid Films, 517, 6516-6519 (2009).
  • Jarvis, K. ; Carpenter, R.W. ; Davis, M. ; Campbell, K.A. “An investigation of amorphous Ge2Se3 structure for phase change memory devices using fluctuation electron microscopy.” Journal of Applied Physics, 106, 083507-083507-5 (2009).
  • Campbell, K.A.; Anderson, C.M. “Phase-Change Memory Devices with Stacked Ge-Chalcogenide/Sn-Chalcogenide Layers.” Microelectronics Journal, 38, 52-59 (2007).

Further Reading