• Knowm Memristor Six Pack
  • Knowm Memristor Frequency Response Fixed V amplitude
  • Bi-Directional pulsed incremental response
  • 8 Discrete Memristor 16DIP Chip Pinout

SDC Tungsten Discrete Memristors DIP 6-Pack

$ 280.00

DATA SHEET.

A pack of six (6) chips, each chip containing eight (8) discrete Self-Directed-Channel (SDC) memristors with tungsten (W) dopant in a 16-pin ceramic DIP package.

SKU: K-0013-3 Category: Tags: , , ,

Description

International Shipping

Please read the shipping information page especially if you are ordering from outside the United States, as all extra import, duty and/or other taxes may apply.

For more in-depth information about the device properties and precaution to take while working with the memristors download the Knowm Memristors Data Sheet.

A pack of six (6) chips, each chip containing eight (8) discrete Self-Directed-Channel (SDC) memristors with tungsten (W) dopant in a 16-pin ceramic DIP package. Eight individual electrically isolated memristors. Ideal for circuit prototyping, testing and tinkering of small memristor circuits. Each package contains:

  • (2) Tier-1 chips, 8/8 memristors passed QC
  • (4) Tier-2 chips, 6-7 memristors passed QC

Note: Primary reason for a device to fail Quality Control (QC) is due to a failed wirebond in chip packaging, not the memristor itself. A failed wiredbond will manifest as an open circuit. A failing wirebond will manifest as a device with a higher than normal forward and reverse threshold due to voltage drop over the wirebond.

Knowm Memristor Material Stack

Knowm Memristor Material Stack

This material stack is based on mobile metal ion conduction through a chalcogenide material. The devices are fabricated with a layer of metal that is easily oxidizable, located near one electrode. The first time a device is operated after fabrication the self-directed channel is formed during application of a positive potential to the top electrode. The potential required for this operation is typically the same as required during normal device operation. This first operation generates Sn ions from the SnSe layer and forces them into the ‘active’ Ge2Se3 layer, where they undergo a chemical reaction. During this reaction, the glass network is distorted to provide conductive channels for the movement of Ag+ during device operation. The resistance is tunable in the lower and higher directions by movement of Ag into or away from these channels through application of either a positive or negative potential, respectively, across the device. Knowm memristors are Ag+ ion SDC memristor where the active layer has been doped to enhance and optimize the memristors properties.

8 Discrete Memristor 16DIP Chip Pinout

8 Discrete Memristor 16DIP Chip Pinout

Additional information

Weight .008 kg
Dimensions 11 × 6 × 1 cm