For more in-depth information about the device properties and precautions to take while working with W-SDC memristors download the Knowm Memristors Data Sheet.
Knowm Self Directed Channel memristors with tungsten dopant (W-SDC) in various crossbar configurations encapsulated in optically clear resin on 64 pin edge board. PCI-E 64 Breakout board included with purchase of one or more crossbar chips. Available in 2x2x16, 4x4x8, 8x8x4, 16x16x2 and 32x32x1 configurations. These chips are intended for use in research of neural network accelerators, non-volatile memory controllers, in-memory computing, etc.
This is an advanced research product for skilled researchers, technicians or educators with electrical engineering backgrounds. If you have never used a real memristor chip we strongly encourage you to first gain hands-on experience with our Memristor Discovery kit and the much less expensive 1X16 arrays.
The first time a device is operated after fabrication the self-directed channel is formed during application of a positive potential to the top electrode. The potential required for this operation is typically the same as required during normal device operation. This first operation generates Sn ions from the SnSe layer and forces them into the ‘active’ Ge2Se3 layer, where they undergo a chemical reaction. During this reaction, the glass network is distorted to provide conductive channels for the movement of Ag+ during device operation. The resistance is tunable in the lower and higher directions by movement of Ag into or away from these channels through application of either a positive or negative potential, respectively, across the device. Knowm memristors are Ag+ ion SDC memristor where the active layer has been doped to enhance and optimize the memristors properties.