• Knowm Memristor Tungsten
  • Knowm Memristor 2
  • Kris and Alex
  • Knowm Memristor Material Stack
  • Knowm memristor overlay of freq and Amp variable curves
  • Knowm Memristor Frequency Response Fixed V amplitude
  • Freq and Amp variable curves for Knowm memristor
  • Bi-Directional pulsed incremental response
  • Consecutive nudging 250ns
  • 1us consecutive nudging of Knowm BS-AF-W Memristor
  • Knowm Memristor Tungsten
  • Knowm Memristor W High Temperature Cycling

BS-AF-W 16DIP Packaged Memristors

$ 180.00$ 220.00

DATA SHEET.

Eight (8) discrete memristors in 16-pin ceramic DIP package straight from the lab of memristor pioneer Dr. Kris Campbell at Boise State University. These devices were developed specifically for neuromemristive applications such as AHaH Computing and can be applied to your custom CMOS circuits via our CMOS BEOL Service.

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Description

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International Shipping

Please read the shipping information page especially if you are ordering from outside the United States, as all extra import, duty and/or other taxes may apply.

For more in-depth information about the device properties and precaution to take while working with the memristors download the Knowm Memristors Data Sheet.

Eight (8) discrete memristors in a 16-pin ceramic DIP package. Batch to batch variations warrant a distinction between products hence the two different variations (wafer-9 and wafer-16) available for selection. Wafer-9 are the original devices available since mid-2015 and almost sold out at this time. Wafer-16 devices are new since November 2016. The Wafer-16 devices differ from the wafer-9 devices in that they operate at higher currents and require higher forming voltages and currents. More exact details distinguishing the two batches will come soon. Serial numbers on the packages indicate which wafer they are from.

Knowm memristor material stack

Knowm memristor material stack

This material stack is based on mobile metal ion conduction through a chalcogenide material. The devices are fabricated with a layer of metal that is easily oxidizable, located near one electrode. When a voltage is applied across the device with the more positive potential on the electrode near this metal layer, the metal is oxidized to form ions. Once formed, the ions move through the device towards the lower potential electrode. The ions move through a layer of amorphous chalcogenide material (the active layer) to reach the lower potential electrode where they are reduced to their metallic form and eventually form a conductive pathway between both electrodes that spans the active material layer, lowering the device resistance. Reversing the direction of the applied potential causes the conductive channel to dissolve and the device resistance to increase. The device is bipolar, cycling between high and low resistance values by switching the polarity of the applied potential. The resistance is related at any time to the amount of metal located within the active layer.

Volume Discounts

Discounts are available for bulk orders. Discounted prices are automatically calculated in the shopping cart.

Quantity Discount
2-3 10%
4-7 15%
8-15 20%
16-31 25%
32+ 30%

Related Resources

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Disclaimer

The BS-AF-W Memristor is not a complete product. It is intended solely for use for preliminary feasibility evaluation in laboratory/development environments by technically qualified electronics experts who are familiar with the dangers and application risks associated with handling electrical mechanical components, systems and subsystems. It should not be used as all or part of a finished end product. If you are pursing a commercial use or application, please contact us.

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Additional information

Yield

Wafer-9 Tier 1, Wafer-9 Tier 2, Wafer-16 Tier 1, Wafer-16 Tier 2

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